![]() Gallium Nitride (GaN) or Aluminum GaN (AlGaN).Gallium Arsenide (GaAs) or Aluminum GaAs (AlGaAs).Indium Phosphide (InP), Indium Aluminum Arsenide (InAlAs), or Indium Gallium Arsenide (InGaAs).Si Bipolar COmplementary Metal Oxide Semiconductor (Si BiCMOS).Vertical Double Diffused MOSFET (VDMOS).Junction Gate Field Effect Transistor (JFET).High Electron Mobility Transistor (HEMT).Insulated-gate Bipolar Transistor (IGBT).Heterojunction Bipolar Transistor (HBT).As most RF transistors are used to make amplifiers, there are three main categories of amplifiers, low-noise amplifiers, gain block amplifiers, and high power amplifiers. Switching transistors are used for their ability to rapidly be set to conduction-/off-states with minimal transient performance degraded factors. Small-signal technologies are typically used for low-noise signal processing and amplification, where power transistors are used for high-gain and high power applications. Certain RF transistor types and semiconductor configurations are best suited to certain applications, which is why there is such a diversity of configurations. In essence, there are three categories of RF semiconductor technologies, small-signal, switching, and power transistors. Some of the RF transistor types, configurations, and semiconductors have been in use for decades, and are often still used in certain niche applications, while other nuances of RF transistor technology have recently reached the market and are enabling new applications. As more devices used RF/wireless technology to communicate and sense, there will be an even greater diversity of RF transistor technologies. Future developments on these technologies are also ongoing, as competition in wireless communications, satellite communications, radar, sensing, test and measurement, and other applications grows. The growing number of RF, microwave, and millimeter-wave applications has led to a growth in the number of RF transistor types, semiconductors, and configurations being used today.
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